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HIGH-TEMPERATURE PLASTICITY OF III-V SEMICONDUCTORS

Publication status:: Published

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APA Style

Zozime, A., & Castaing, J. (1989). HIGH-TEMPERATURE PLASTICITY OF III-V SEMICONDUCTORS. 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104, 339–348.

MLA Style

Zozime, A, and J Castaing. “HIGH-TEMPERATURE PLASTICITY OF III-V SEMICONDUCTORS.” 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, vol. 104, 1989, pp. 339–48.

Chicago Style

Zozime, A, and J Castaing. 1989. “HIGH-TEMPERATURE PLASTICITY OF III-V SEMICONDUCTORS.” In 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104:339–48.
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Authors

+ Zozime, A More by this author

Role:: Author

+ Castaing, J More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 339-348
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Keywords:: IN-DOPED GAAS

COMPRESSION

SILICON

DYNAMICS

dislocations

ACTIVATION

GERMANIUM

GAAS SINGLE-CRYSTALS

DEFORMATION-BEHAVIOR

INDIUM-ANTIMONIDE
Pubs id:: pubs:28630
UUID:: uuid:eb696e1b-fa36-4007-bb91-fd6b5fa52a7a
Local pid:: pubs:28630
Source identifiers:: 28630
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_eb696e1bfa364007bb91fd6b5fa52a7a

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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