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THE THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS (100)

Abstract:: The adsorption and thermal decomposition of triethylgallium (TEG) on GaAs has been studied using thermal desorption and XPS techniques. Pure Ga films are deposited when adsorbed TEG layers on GaAs are heated in a reaction which competes with TEG and diethylgallium (DEG) desorption. Ethene, ethene and hydrogen are detected as the decomposition products of the overall cracking reaction. © 1990.

Publication status:: Published

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APA Style

Murrell, A., Wee, A., Fairbrother, D., Singh, N., Foord, J., Davies, G., & Andrews, D. (1990). THE THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS (100). 41(4-6), 955–957.

MLA Style

Murrell, A, et al. “THE THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS (100).” vol. 41, nos. 4-6, 1990, pp. 955–57.

Chicago Style

Murrell, A, A Wee, D Fairbrother, et al. 1990. “THE THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS (100).” 41 (4-6): 955–57.
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Publisher copy:: 10.1016/0042-207X(90)93832-4

Authors

+ Murrell, A More by this author

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+ Wee, A More by this author

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+ Fairbrother, D More by this author

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+ Singh, N More by this author

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+ Foord, J More by this author

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Host title:: VACUUM
Volume:: 41
Issue:: 4-6
Pages:: 955-957
Publication date:: 1990-01-01
DOI:: 10.1016/0042-207X(90)93832-4
ISSN:: 0042-207X

Pubs id:: pubs:43449
UUID:: uuid:eb39094f-48dc-4b25-a198-8131e8e24c3b
Local pid:: pubs:43449
Source identifiers:: 43449
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_eb39094f48dc4b25a1988131e8e24c3b

Terms of use

Copyright date:: 1990

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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