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THE THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS (100)

Abstract:
The adsorption and thermal decomposition of triethylgallium (TEG) on GaAs has been studied using thermal desorption and XPS techniques. Pure Ga films are deposited when adsorbed TEG layers on GaAs are heated in a reaction which competes with TEG and diethylgallium (DEG) desorption. Ethene, ethene and hydrogen are detected as the decomposition products of the overall cracking reaction. © 1990.
Publication status:
Published

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Volume:
41
Issue:
4-6
Pages:
955-957
Host title:
VACUUM
Publication date:
1990-01-01
DOI:
ISSN:
0042-207X
Source identifiers:
43449
Pubs id:
pubs:43449
UUID:
uuid:eb39094f-48dc-4b25-a198-8131e8e24c3b
Local pid:
pubs:43449
Deposit date:
2012-12-19

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