Journal article

OBSERVATION BY PHOTOCONDUCTIVITY OF STRAIN SPLITTING OF SHALLOW BULK DONORS LOCATED NEAR TO SURFACE IN SILICON MOS DEVICES

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APA Style

Nicholas, R., Klitzing, K., & Stradling, R. (1976). OBSERVATION BY PHOTOCONDUCTIVITY OF STRAIN SPLITTING OF SHALLOW BULK DONORS LOCATED NEAR TO SURFACE IN SILICON MOS DEVICES. SOLID STATE COMMUNICATIONS, 20(1), 77–80.

MLA Style

Nicholas, R., et al. “OBSERVATION BY PHOTOCONDUCTIVITY OF STRAIN SPLITTING OF SHALLOW BULK DONORS LOCATED NEAR TO SURFACE IN SILICON MOS DEVICES.” SOLID STATE COMMUNICATIONS, vol. 20, no. 1, 1976, pp. 77–80.

Chicago Style

Nicholas, R, K Klitzing, and R Stradling. 1976. “OBSERVATION BY PHOTOCONDUCTIVITY OF STRAIN SPLITTING OF SHALLOW BULK DONORS LOCATED NEAR TO SURFACE IN SILICON MOS DEVICES.” SOLID STATE COMMUNICATIONS 20 (1): 77–80.
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Publisher copy:: 10.1016/0038-1098(76)91703-8

Authors

+ Nicholas, R More by this author

Role:: Author

+ Klitzing, K More by this author

Role:: Author

+ Stradling, R More by this author

Role:: Author

Journal:: SOLID STATE COMMUNICATIONS More from this journal
Volume:: 20
Issue:: 1
Pages:: 77-80
Publication date:: 1976-01-01
DOI:: 10.1016/0038-1098(76)91703-8
ISSN:: 0038-1098

Pubs id:: pubs:8576
UUID:: uuid:ea24f896-dc58-49d4-b506-8b9dbe3296f1
Local pid:: pubs:8576
Source identifiers:: 8576
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1976

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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