OPTICAL SPECTROSCOPY OF GAAS IN THE EXTREME QUANTUM LIMIT - INTEGER AND FRACTIONAL QUANTUM HALL-EFFECT, AND ONSET OF THE ELECTRON SOLID

Conference item

Our recent optical detection of the integer and fractional quantum Hall effects in GaAs, by intrinsic band-gap photoluminescence at dilution refrigerator temperatures, is reviewed. This work has been extended to the extreme quantum limit where a photoluminescence peak develops close to Landau level filling factor ν = 1/5 which correlates both with the onset of threshold behaviour in current-voltage characteristics of the two-dimensional electron system and a resonant radio-frequency absorption; the latter are quantitatively accounted for by a model of crystalline electronic structure broken up into domains. Preliminary mK transport experiments in intense, pulsed magnetic fields are also described, which establish a basis to access the electron solid phase transition in a hitherto unattainable region of the (B, T) plane.

Authors: Clark, R; Ford, R; Haynes, S; Ryan, J; Turberfield, A

• Publication status: Published
• Publisher: Elsevier
• Journal: PHYSICA B
• Volume: 169
• Issue: 1-4
• Pages: 336-354
• Publication date: 1991-02-01
• Event title: 19TH INTERNATIONAL CONF ON LOW TEMPERATURE PHYSICS ( LT-19 )
• DOI: 10.1016/0921-4526(91)90248-D
• ISSN: 0921-4526
• Keywords: GAS; FLUID; CHARGE; TRANSITION; V=2/3; SPIN CONFIGURATIONS; STRONG MAGNETIC-FIELD; EXCITATIONS; O LANDAU-LEVEL; GROUND-STATES