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OPTICAL SPECTROSCOPY OF GAAS IN THE EXTREME QUANTUM LIMIT - INTEGER AND FRACTIONAL QUANTUM HALL-EFFECT, AND ONSET OF THE ELECTRON SOLID

Abstract:

Our recent optical detection of the integer and fractional quantum Hall effects in GaAs, by intrinsic band-gap photoluminescence at dilution refrigerator temperatures, is reviewed. This work has been extended to the extreme quantum limit where a photoluminescence peak develops close to Landau level filling factor ν = 1/5 which correlates both with the onset of threshold behaviour in current-voltage characteristics of the two-dimensional electron system and a resonant radio-frequency absorptio...

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Publication status:
Published

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Authors


TURBERFIELD, A More by this author
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Publisher:
Publ by Elsevier Science Publ BV (North-Holland)
Volume:
169
Issue:
1-4
Pages:
336-354
Publication date:
1991-02-05
DOI:
ISSN:
0921-4526
URN:
uuid:ea11d0db-b97f-4907-b254-ad5ce2069dd5
Source identifiers:
28841
Local pid:
pubs:28841

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