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Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

Abstract:

In this paper we present a detailed analysis of the structural, electronic, and optical properties of an m-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL ...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1103/PhysRevB.92.235419

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
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Name:
Science Foundation Ireland
Grant:
10/IN.1/I2994
13/SIRG/2210
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Name:
European Union
Grant:
604416
More from this funder
Name:
European Research Council
Grant:
279361 (MACONS
More from this funder
Name:
Engineering and Physical Sciences Research Council
Grant:
EPJ0016271
EPJ0036031
Publisher:
American Physical Society
Journal:
Physical Review B More from this journal
Volume:
92
Issue:
23
Article number:
235419
Publication date:
2015-12-01
DOI:
EISSN:
1550-235X
ISSN:
1098-0121
Pubs id:
pubs:580981
UUID:
uuid:e953cc68-7843-4631-8d65-3dbac1867158
Local pid:
pubs:580981
Source identifiers:
580981
Deposit date:
2016-01-19

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