Conference item

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

Abstract:: Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. In a preliminary Monte Carlo study we have simulations which reproduce the major experimental observations, confirming the development of a non-thermal electron distribution near E-LO due to the strong electron-LO phonon interaction. Hot phonon effects are pronounced at high carrier densities.

Publication status:: Published

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APA Style

Hess, S., Taylor, R., O'Sullivan, E., Ryan, J., Cain, N., Roberts, V., & Roberts, J. (1999). Hot carrier relaxation by extreme electron-LO phonon scattering in GaN. 3rd International Conference on Nitride Semiconductors (ICNS 99), 216(1), 51–55.

MLA Style

Hess, S, et al. “Hot Carrier Relaxation by Extreme Electron-LO Phonon Scattering in GaN.” 3rd International Conference on Nitride Semiconductors (ICNS 99), vol. 216, no. 1, 1999, pp. 51–55.

Chicago Style

Hess, S, R Taylor, E O'Sullivan, J Ryan, N Cain, V Roberts, and J Roberts. 1999. “Hot Carrier Relaxation by Extreme Electron-LO Phonon Scattering in GaN.” In 3rd International Conference on Nitride Semiconductors (ICNS 99), 216:51–55.
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Publisher copy:: 10.1002/(SICI)1521-3951(199911)216:1<51::AID-PSSB51>3.0.CO;2-M

Authors

+ Hess, S More by this author

Role:: Author

+ Taylor, R More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

+ O'Sullivan, E More by this author

Role:: Author

+ Ryan, J More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

+ Cain, N More by this author

Role:: Author

More authors...

Journal:: PHYSICA STATUS SOLIDI B-BASIC RESEARCH More from this journal
Volume:: 216
Issue:: 1
Pages:: 51-55
Publication date:: 1999-11-01
Event title:: 3rd International Conference on Nitride Semiconductors (ICNS 99)
DOI:: 10.1002/(SICI)1521-3951(199911)216:1<51::AID-PSSB51>3.0.CO;2-M
EISSN:: 1521-3951
ISSN:: 0370-1972

Keywords:: ZINCBLENDE

PHASES

WURTZITE
Pubs id:: pubs:12156
UUID:: uuid:e901234a-3b9b-4e85-b10c-49b0eb3b0c0d
Local pid:: pubs:12156
Source identifiers:: 12156
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_e901234a3b9b4e85b10c49b0eb3b0c0d

Terms of use

Copyright date:: 1999

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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