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Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

Abstract:

Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. In a preliminary Monte Carlo study we have simulations which reproduce the major experimental observations, confirming the development of a non-thermal electron distribution near E-LO due to the strong electr...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
O'Sullivan, ED More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Volume:
216
Issue:
1
Pages:
51-55
Publication date:
1999-11-05
DOI:
EISSN:
1521-3951
ISSN:
0370-1972
URN:
uuid:e901234a-3b9b-4e85-b10c-49b0eb3b0c0d
Source identifiers:
12156
Local pid:
pubs:12156

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