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Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells

Abstract:

We report the first picosecond time-resolved photoluminescence measurementsof hot-carrier relaxation in a modulation-doped GaAs-GaAlAs MQW in the presence of strong magnetic fields. We have measured the lifetimes of carriers in excited Landau levels and have determined the time-dependent carrier temperature. We find that the cooling rate is slower in applied field tthan at B=0; also there is a significant increase in the cooling rate for B {greater-than or approximate} 10T. We report also the...

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
Physica B+C More from this journal
Volume:
134
Issue:
1-3
Pages:
318-322
Publication date:
1985-01-01
DOI:
ISSN:
0378-4363
Language:
English
Pubs id:
pubs:134654
UUID:
uuid:e8ec9b49-93e4-4535-9979-d1735727efe5
Local pid:
pubs:134654
Source identifiers:
134654
Deposit date:
2012-12-19

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