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Simulation of the quantum-confined stark effect in a single InGaN quantum dot

Abstract:
By means of a 3D self-consistent numerical simulation we have calculated the effect of an externally-applied lateral electric field upon a single InGaN quantum dot. Overall, good agreement between the modeling and experimental results was observed. Modeling results support the observation that the quantum-confined Stark effect has both permanent dipole moment and polarizability components.
Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author


Journal:
NUSOD '05: Proceedings of the 5th International Conference on Numerical Simulations of Optoelectronic Devices More from this journal
Pages:
5-6
Publication date:
2004-01-01
Event title:
5th International Conference on Numerical Simulation of Optoelectronic Devices
ISBN:
0780391497


Keywords:
Pubs id:
pubs:14631
UUID:
uuid:e8e8bef8-c7e8-4b89-af27-a7a10fab2507
Local pid:
pubs:14631
Source identifiers:
14631
Deposit date:
2012-12-19
ARK identifier:

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