Conference item
Simulation of the quantum-confined stark effect in a single InGaN quantum dot
- Abstract:
- By means of a 3D self-consistent numerical simulation we have calculated the effect of an externally-applied lateral electric field upon a single InGaN quantum dot. Overall, good agreement between the modeling and experimental results was observed. Modeling results support the observation that the quantum-confined Stark effect has both permanent dipole moment and polarizability components.
- Publication status:
- Published
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Authors
- Journal:
- NUSOD '05: Proceedings of the 5th International Conference on Numerical Simulations of Optoelectronic Devices More from this journal
- Pages:
- 5-6
- Publication date:
- 2004-01-01
- Event title:
- 5th International Conference on Numerical Simulation of Optoelectronic Devices
- ISBN:
- 0780391497
- Keywords:
- Pubs id:
-
pubs:14631
- UUID:
-
uuid:e8e8bef8-c7e8-4b89-af27-a7a10fab2507
- Local pid:
-
pubs:14631
- Source identifiers:
-
14631
- Deposit date:
-
2012-12-19
- ARK identifier:
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- Copyright date:
- 2004
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