Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates

Conference item

We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are grown on the substrates straight, following (111) direction; by using two temperature growth, the nanowires were grown free from structural defects, such as twin defects and stacking faults. System...

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Authors: Kang, J; Gao, Q; Joyce, H; Tan, H; Jagadish, C

• Host title: 2010 10th IEEE Conference on Nanotechnology, NANO 2010
• Pages: 470-473
• Publication date: 2010-01-01
• DOI: 10.1109/NANO.2010.5697783
• ISBN: 9781424470334
• Keywords: Defect-free; Si substrate; Epitaxial growth; Nanowire; MOCVD; GaAs