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Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates

Abstract:

We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are grown on the substrates straight, following (111) direction; by using two temperature growth, the nanowires were grown free from structural defects, such as twin defects and stacking faults. System...

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Publisher copy:
10.1109/NANO.2010.5697783

Authors


Jagadish, C More by this author
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Pages:
470-473
Publication date:
2010
DOI:
URN:
uuid:e86a0eef-ab38-4cc2-a314-e627341b4248
Source identifiers:
172762
Local pid:
pubs:172762
ISBN:
9781424470334

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