Photoluminescence studies of Mg-doped and Si-doped gallium nitride epilayers

Journal article

We present time-, temperature- and intensity-dependent photoluminescence measurements of undoped, n-type and p-type GaN epilayers. In the nominally undoped samples we observe at low temperatures the trapping of free excitons by neutral donors and subsequent radiative recombination. In the n-type Si-doped samples bound-exciton luminescence is dominant over a wide range of temperatures. The luminescence from p-type Mg-doped samples is dominated by shallow-donor-shallow-acceptor pair recombination and by a deep blue centres at 3.0 eV. These two emission bands show identical temperature and linear intensity dependence.

Authors: Hess, S; Taylor, R; Ryan, J; Cain, N; Roberts, V

• Journal: Physica Status Solidi (B) Basic Research
• Volume: 210
• Issue: 2
• Pages: 465-470
• Publication date: 1998-12-01
• ISSN: 0370-1972
• Language: English