Journal article icon

Journal article

Reduction of dislocation mobility in GexSi1-x epilayers

Abstract:
A new method is presented that allows reduction in the dislocation mobility in GexSi1-x layers on Si by application of a load opposing the misfit stress in the layers. Results are given for layers with a Ge mole fraction x=0·016 and x = 0·022 and layer thicknesses of 0·42-0·9 μm.
Publication status:
Published

Actions

  • Cite

  • Print

Access Document

Publisher copy:
10.1080/095008396180416

Authors

More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author

Journal:
PHILOSOPHICAL MAGAZINE LETTERS More from this journal
Volume:
74
Issue:
2
Pages:
67-71
Publication date:
1996-08-01
DOI:
EISSN:
1362-3036
ISSN:
0950-0839

Language:
English
Pubs id:
pubs:13812
UUID:
uuid:e5e0fd8e-65ca-4c81-aef8-f3221295d201
Local pid:
pubs:13812
Source identifiers:
13812
Deposit date:
2012-12-19

Terms of use

Views and Downloads





If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP