Journal article

MBE growth of (110) refractory metals on a-plane sapphire

Abstract:: Molecular growth epitaxy (MBE) growth of (110) refractory metals on a-plane sapphire was discussed. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) techniques were used. Results showed that both Nb and Ta grow in an approximate layer-by-layer mode and growth in Mo is attributed to greater mismatch with sapphire.

Publication status:: Published

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APA Style

Ward, R., Grier, E., & Petford-Long, A. (2003). MBE growth of (110) refractory metals on a-plane sapphire. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 14(9), 533–539.

MLA Style

Ward, R, et al. “MBE Growth of (110) Refractory Metals on a-Plane Sapphire.” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol. 14, no. 9, 2003, pp. 533–39.

Chicago Style

Ward, R, E Grier, and A Petford-Long. 2003. “MBE Growth of (110) Refractory Metals on a-Plane Sapphire.” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 14 (9): 533–39.
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Publisher copy:: 10.1023/A:1024585400149

Authors

+ Ward, R More by this author

Role:: Author

+ Grier, E More by this author

Role:: Author

+ Petford-Long, A More by this author

Role:: Author

Journal:: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS More from this journal
Volume:: 14
Issue:: 9
Pages:: 533-539
Publication date:: 2003-09-01
DOI:: 10.1023/A:1024585400149
ISSN:: 0957-4522

Language:: English
Pubs id:: pubs:21983
UUID:: uuid:e519c2d5-49af-4b95-b2da-42d872f1f03a
Local pid:: pubs:21983
Source identifiers:: 21983
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_e519c2d549af4b95b2da42d872f1f03a

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Copyright date:: 2003

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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