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MBE growth of (110) refractory metals on a-plane sapphire

Abstract:
Molecular growth epitaxy (MBE) growth of (110) refractory metals on a-plane sapphire was discussed. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) techniques were used. Results showed that both Nb and Ta grow in an approximate layer-by-layer mode and growth in Mo is attributed to greater mismatch with sapphire.
Publication status:
Published

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Publisher copy:
10.1023/A:1024585400149

Authors


Petford-Long, AK More by this author
Journal:
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume:
14
Issue:
9
Pages:
533-539
Publication date:
2003-09-05
DOI:
ISSN:
0957-4522
URN:
uuid:e519c2d5-49af-4b95-b2da-42d872f1f03a
Source identifiers:
21983
Local pid:
pubs:21983
Language:
English

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