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RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON

Publication status:: Published

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APA Style

Fell, T., & Wilshaw, P. (1989). RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON. 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104, 227–232.

MLA Style

Fell, T, and P Wilshaw. “RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON.” 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, vol. 104, 1989, pp. 227–32.

Chicago Style

Fell, T, and P Wilshaw. 1989. “RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON.” In 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104:227–32.
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Authors

+ Fell, T More by this author

Role:: Author

+ Wilshaw, P More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 227-232
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Pubs id:: pubs:12778
UUID:: uuid:e4f8170d-a9d4-4093-a784-699c368caa0c
Local pid:: pubs:12778
Source identifiers:: 12778
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_e4f8170da9d44093a784699c368caa0c

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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