Journal article
Hydrogen induced degradation: a possible mechanism for light- and elevated temperature- induced degradation in n-type silicon
- Abstract:
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In this work, we demonstrate a form of minority carrier degradation on n-type Cz silicon that affects both the bulk and surface related lifetimes. We identify three key behaviors of the degradation mechanism; 1) a firing dependence for the extent of degradation, 2) the appearance of bulk degradation when wafers are fired in the presence of a diffused emitter and 3) a firing related apparent surface degradation when wafers are fired in the absence of an emitter. We further report a defect capt...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
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- Files:
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(Accepted manuscript, pdf, 861.4KB)
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- Publisher copy:
- 10.1016/j.solmat.2018.05.034
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Authors
Funding
Australian Centre for Advanced Photovoltaics
More from this funder
+ Engineering and Physical Sciences Research Council
More from this funder
Grant:
IndustrialEngagementFund
International
theSupersiliconproject(EP/M024911/1
Bibliographic Details
- Publisher:
- Elsevier Publisher's website
- Journal:
- Solar Energy Materials and Solar Cells Journal website
- Volume:
- 185
- Pages:
- 174-182
- Publication date:
- 2018-05-29
- Acceptance date:
- 2018-05-15
- DOI:
- ISSN:
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0927-0248
- Source identifiers:
-
860059
Item Description
- Keywords:
- Pubs id:
-
pubs:860059
- UUID:
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uuid:e468f21e-dc3d-4a84-a28d-82452aa103f1
- Local pid:
- pubs:860059
- Deposit date:
- 2018-07-13
Terms of use
- Copyright holder:
- Elsevier BV
- Copyright date:
- 2018
- Notes:
- Copyright © 2018 Elsevier B.V. This is the accepted manuscript version of the article. The final version is available online from Elsevier at: https://doi.org/10.1016/j.solmat.2018.05.034
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