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Hydrogen induced degradation: a possible mechanism for light- and elevated temperature- induced degradation in n-type silicon

Abstract:

In this work, we demonstrate a form of minority carrier degradation on n-type Cz silicon that affects both the bulk and surface related lifetimes. We identify three key behaviors of the degradation mechanism; 1) a firing dependence for the extent of degradation, 2) the appearance of bulk degradation when wafers are fired in the presence of a diffused emitter and 3) a firing related apparent surface degradation when wafers are fired in the absence of an emitter. We further report a defect capt...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted Manuscript

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Publisher copy:
10.1016/j.solmat.2018.05.034

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Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
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Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
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Australian Centre for Advanced Photovoltaics More from this funder
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Grant:
International and Industrial Engagement Fund and the Supersilicon project (EP/M024911/1)
Publisher:
Elsevier Publisher's website
Journal:
Solar Energy Materials and Solar Cells Journal website
Volume:
185
Pages:
174-182
Publication date:
2018-05-29
Acceptance date:
2018-05-15
DOI:
ISSN:
0927-0248
Pubs id:
pubs:860059
URN:
uri:e468f21e-dc3d-4a84-a28d-82452aa103f1
UUID:
uuid:e468f21e-dc3d-4a84-a28d-82452aa103f1
Local pid:
pubs:860059

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