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III-V compound semiconductor nanowires

Abstract:: InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter. © 2009 IEEE NANO Organizers.

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APA Style

Paiman, S., Joyce, H., Kang, J., Gao, Q., Tan, H., Kim, Y., Zhang, X., Zou, J., & Jagadish, C. (2009). III-V compound semiconductor nanowires. 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009, 155–156.

MLA Style

Paiman, S., et al. “III-V Compound Semiconductor Nanowires.” 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009, 2009, pp. 155–56.

Chicago Style

Paiman, S, H Joyce, J Kang, Q Gao, H Tan, Y Kim, X Zhang, J Zou, and C Jagadish. 2009. “III-V Compound Semiconductor Nanowires.” In 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009, 155–56.
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+ Paiman, S More by this author

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+ Joyce, H More by this author

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+ Kang, J More by this author

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+ Gao, Q More by this author

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+ Tan, H More by this author

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Host title:: 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
Pages:: 155-156
Publication date:: 2009-01-01
ISBN:: 9789810836948

Pubs id:: pubs:172769
UUID:: uuid:e44cb889-8c9c-4555-931d-b2b1f4c4208d
Local pid:: pubs:172769
Source identifiers:: 172769
Deposit date:: 2012-12-19

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Copyright date:: 2009

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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