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Electron beam induced current investigations of transition metal impurities at extended defects in silicon

Abstract:

The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful technique for studying gettering of impurities to extended defects, its high sensitivity allowing very low impurity concentrations to be studied. Extended defects, when studied by EBIC, normally exhibit one of two different kinds of carrier recombination behavior. In the most common case this is accurately described by the Wilshaw model in which the recombination mechanism is charge controlled. Analyze...

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Publication status:
Published

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Publisher copy:
10.1149/1.2048501

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Publisher:
Electrochemical Soc Inc
Journal:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume:
142
Issue:
12
Pages:
4298-4304
Publication date:
1995-12-05
DOI:
ISSN:
0013-4651
URN:
uuid:e38d4078-fd1c-4857-90c7-b10aac5e8da9
Source identifiers:
19038
Local pid:
pubs:19038
Language:
English

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