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The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells

Abstract:

Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1063/1.4948299

Authors


Griffiths, JT More by this author
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Publisher:
AIP Publishing Publisher's website
Journal:
Journal of Applied Physics Journal website
Volume:
119
Issue:
17
Publication date:
2016-05-02
Acceptance date:
2016-04-15
DOI:
EISSN:
1089-7550
ISSN:
0021-8979
Pubs id:
pubs:625482
URN:
uri:e2992b5e-4e1c-4028-bed9-20f3f21c1d59
UUID:
uuid:e2992b5e-4e1c-4028-bed9-20f3f21c1d59
Local pid:
pubs:625482
Keywords:

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