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Oligomeric aminoborane precursors for the chemical vapour deposition growth of few-layer hexagonal boron nitride

Abstract:

We explore the use of stable, pre-formed, oligomeric aminoboranes as precursors for the chemical vapour deposition growth of few-layered hexagonal boron nitride (h-BN) films on Cu foils under atmospheric pressure conditions. Dimeric diborazane H3B·NH2BH2·NH3 (DAB), and trimeric triborazane H3B·(NH2BH2)2·NH3 (TAB), derivatives of ammonia borane, H3B·NH3 (AB), are compared with AB, a commonly used precursor for the CVD growth of h-BN. Both DAB and TAB show similar effectiveness to AB in growing...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1039/c6ce02006b

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Department:
Oxford, MPLS, Materials
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Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
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Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
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Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
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Department:
Oxford, MPLS, Materials
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Publisher:
Royal Society of Chemistry Publisher's website
Journal:
CrystEngComm Journal website
Volume:
19
Issue:
2
Pages:
285-294
Publication date:
2016-12-08
Acceptance date:
2016-11-17
DOI:
EISSN:
1466-8033
Pubs id:
pubs:665399
URN:
uri:e1aa8abb-b896-4640-9932-c04732663724
UUID:
uuid:e1aa8abb-b896-4640-9932-c04732663724
Local pid:
pubs:665399
Keywords:

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