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Journal article

Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy

Abstract:
Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V-1s-1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s. © 2013 IEEE.
Publication status:
Published

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Publisher copy:
10.1109/IRMMW-THz.2013.6665866

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author


Journal:
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) More from this journal
Publication date:
2013-01-01
DOI:
EISSN:
2162-2035
ISSN:
2162-2027


Language:
English
Pubs id:
pubs:449699
UUID:
uuid:e103f550-fa3b-4aa7-bcb7-79745fead9f8
Local pid:
pubs:449699
Source identifiers:
449699
Deposit date:
2014-02-28

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