Imaging nonradiative point defects buried in quantum wells using cathodoluminescence

Journal article

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QWs has so far not been demonstrated. Here, using high-resolution cathodoluminescence (CL) and a specific sample design, we spatially resolve, image, and analyze nonradiative PDs in InGaN/GaN QWs at the nanoscale. We identify two different types of PDs by their contrasting behavior with temperature and measure their densities from 10¹⁴ cm^–3 to as high as 10¹⁶ cm^–3. Our CL images clearly illustrate the interplay between PDs and carrier dynamics in the well: increasing PD concentration severely limits carrier diffusion lengths, while a higher carrier density suppresses the nonradiative behavior of PDs. The results in this study are readily interpreted directly from CL images and represent a significant advancement in nanoscale PD analysis.

Authors: Weatherley, TFK; Liu, W; Osokin, V; Alexander, DTL; Taylor, RA

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: American Chemical Society
• Journal: Nano Letters
• Volume: 21
• Issue: 12
• Pages: 5217-5224
• Place of publication: United States
• Publication date: 2021-06-04
• Acceptance date: 2021-06-04
• DOI: 10.1021/acs.nanolett.1c01295
• EISSN: 1530-6992
• ISSN: 1530-6984
• Pmid: 34086468
• Language: English
• Keywords: quantum wells; FFR; imaging; point defects; cathodoluminescence; semiconductor; InGaN