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Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

Abstract:
Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1038/srep07277

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author



Publisher:
Nature Publishing Group
Journal:
Scientific Reports More from this journal
Volume:
4
Issue:
1
Article number:
7277
Publication date:
2014-12-02
Acceptance date:
2014-11-11
DOI:
EISSN:
2045-2322
ISSN:
2045-2322


Language:
English
Pubs id:
pubs:488993
UUID:
uuid:dce22d87-937b-45d5-8d39-cd59b988d9d5
Local pid:
pubs:488993
Source identifiers:
488993
Deposit date:
2014-12-15

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