Journal article
An enhanced alneal process to produce SRV <1 cm/s in 1Ωcm n-type Si
- Abstract:
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The alneal is one of the most effective methods of electrically passivating a silicon surface, and has been used by numerous research groups since the 1980s. In this work, we present an enhanced alneal process that substantially improves its effectiveness. Previously, the success afforded by the standard alneal has been attributed to the chemical passivation provided by hydrogenation of the Si-SiO2 interface. However, the work presented here shows that it is possible to enhance the surface pa...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
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(Version of record, pdf, 918.0KB)
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- Publisher copy:
- 10.1016/j.solmat.2017.06.022
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Authors
Funding
+ Engineering and Physical Sciences Research Council
More from this funder
Funding agency for:
Collett, K
+ Engineering and Physical Sciences Research Council
More from this funder
Funding agency for:
Bonilla Osorio, R
Grant:
EP/M022196/1
+ Engineering and Physical Sciences Research Council
More from this funder
Funding agency for:
Hamer, P
Grant:
EP/M024911/1
+ Engineering and Physical Sciences Research Council
More from this funder
Funding agency for:
Wilshaw, P
Grant:
EP/M024911/1
Bibliographic Details
- Publisher:
- Elsevier Publisher's website
- Journal:
- Solar Energy Materials and Solar Cells Journal website
- Volume:
- 173
- Pages:
- 50-58
- Publication date:
- 2017-07-03
- Acceptance date:
- 2017-06-16
- DOI:
- ISSN:
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0927-0248
- Source identifiers:
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702201
Item Description
- Keywords:
- Pubs id:
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pubs:702201
- UUID:
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uuid:dcb7c853-fd7f-4eda-895b-22842c308be3
- Local pid:
- pubs:702201
- Deposit date:
- 2017-06-29
Terms of use
- Copyright holder:
- Collett et al
- Copyright date:
- 2017
- Notes:
- Copyright © 2017 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/BY/4.0/).
- Licence:
- CC Attribution (CC BY)
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