- Abstract:
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The alneal is one of the most effective methods of electrically passivating a silicon surface, and has been used by numerous research groups since the 1980s. In this work, we present an enhanced alneal process that substantially improves its effectiveness. Previously, the success afforded by the standard alneal has been attributed to the chemical passivation provided by hydrogenation of the Si-SiO2 interface. However, the work presented here shows that it is possible to enhance the surface pa...
Expand abstract - Publication status:
- Published
- Peer review status:
- Peer reviewed
- Version:
- Publisher's version
- Files:
-
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(pdf, 918.0KB)
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- Publisher copy:
- 10.1016/j.solmat.2017.06.022
-
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- Funding agency for:
- Collett, KA
- Funding agency for:
- Bonilla Osorio, RS
- Funding agency for:
- Hamer, P
- Funding agency for:
- Wilshaw, PR
- Publisher:
- Elsevier Publisher's website
- Journal:
- Solar Energy Materials and Solar Cells Journal website
- Volume:
- 173
- Pages:
- 50-58
- Publication date:
- 2017-07-03
- Acceptance date:
- 2017-06-16
- DOI:
- ISSN:
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0927-0248
- Pubs id:
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pubs:702201
- URN:
-
uri:dcb7c853-fd7f-4eda-895b-22842c308be3
- UUID:
-
uuid:dcb7c853-fd7f-4eda-895b-22842c308be3
- Local pid:
- pubs:702201
- Copyright holder:
- Collett et al.
- Copyright date:
- 2017
- Notes:
-
Copyright © 2017 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/BY/4.0/).
Journal article
An enhanced alneal process to produce SRV <1 cm/s in 1Ωcm n-type Si
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+ Engineering and Physical Sciences Research Council
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