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An enhanced alneal process to produce SRV <1 cm/s in 1Ωcm n-type Si

Abstract:

The alneal is one of the most effective methods of electrically passivating a silicon surface, and has been used by numerous research groups since the 1980s. In this work, we present an enhanced alneal process that substantially improves its effectiveness. Previously, the success afforded by the standard alneal has been attributed to the chemical passivation provided by hydrogenation of the Si-SiO2 interface. However, the work presented here shows that it is possible to enhance the surface pa...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1016/j.solmat.2017.06.022

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Department:
Trinity College
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Department:
Oxford, MPLS, Materials
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Department:
Oxford, MPLS, Materials
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Department:
Oxford, MPLS, Materials
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Funding agency for:
Collett, KA
Publisher:
Elsevier Publisher's website
Journal:
Solar Energy Materials and Solar Cells Journal website
Volume:
173
Pages:
50-58
Publication date:
2017-07-03
Acceptance date:
2017-06-16
DOI:
ISSN:
0927-0248
Pubs id:
pubs:702201
URN:
uri:dcb7c853-fd7f-4eda-895b-22842c308be3
UUID:
uuid:dcb7c853-fd7f-4eda-895b-22842c308be3
Local pid:
pubs:702201

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