Modelling of Kelvin probe surface voltage and photovoltage in dielectric-semiconductor interfaces

Journal article

The characterisation of dielectric-semiconductor interfaces via Kelvin probe surface voltage and photovoltage has become a widespread method of extracting the electrical properties influencing optoelectronic devices. Kelvin probe offers a versatile, contactless and vacuum-less technique able to provide useful insights into the electronic structure of semiconductor surfaces. Semiconductor theory has long been used to explain the observations from surface voltage measurements, often by making large assumptions about the characteristics of the system. In this work I report an updated theoretical treatment to model the results of Kelvin probe surface voltage and photovoltage measurements including four critical mechanisms: the concentration of charge stored in interface surface states, the charge stored in different locations of a surface dielectric thin film, the changes to effective lifetime and excess carrier density as a result of charge redistribution, and the non-uniformity of charge observed on most large scale thin film coatings used for passivation and optical improvement in optoelectronic devices. A full model is drawn and solved analytically to exemplify the role that these mechanisms have in surface voltage characterisation. The treatment in this work provides crucial understanding of the mechanisms that give rise to surface potential in semiconductors. As such this work will help the design and development of better optoelectronic devices.

Authors: Bonilla Osorio, RS

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: IOP Publishing
• Journal: Materials Research Express
• Volume: 9
• Issue: 8
• Article number: 085901
• Publication date: 2022-08-05
• Acceptance date: 2022-07-27
• DOI: 10.1088/2053-1591/ac84c8
• EISSN: 2053-1591
• Language: English
• Keywords: thin film dielectrics; surface photovoltage; FFR; kelvin probe; silicon surface passivation