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Electrical and structural analysis of high-dose Si implantation in GaN

Publication status:: Published

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APA Style

Zolper, J., Tan, H., Williams, J., Zou, J., Cockayne, D., Pearton, S., Crawford, M., & Karlicek, R. (1997). Electrical and structural analysis of high-dose Si implantation in GaN. APPLIED PHYSICS LETTERS, 70(20), 2729–2731.

MLA Style

Zolper, J, et al. “Electrical and Structural Analysis of High-Dose Si Implantation in GaN.” APPLIED PHYSICS LETTERS, vol. 70, no. 20, 1997, pp. 2729–31.

Chicago Style

Zolper, J, H Tan, J Williams, et al. 1997. “Electrical and Structural Analysis of High-Dose Si Implantation in GaN.” APPLIED PHYSICS LETTERS 70 (20): 2729–31.
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Publisher copy:: 10.1063/1.119254

Authors

+ Zolper, J More by this author

Role:: Author

+ Tan, H More by this author

Role:: Author

+ Williams, J More by this author

Role:: Author

+ Zou, J More by this author

Role:: Author

+ Cockayne, D More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Materials
Role:: Author

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Journal:: APPLIED PHYSICS LETTERS More from this journal
Volume:: 70
Issue:: 20
Pages:: 2729-2731
Publication date:: 1997-05-19
DOI:: 10.1063/1.119254
ISSN:: 0003-6951

Pubs id:: pubs:14702
UUID:: uuid:dba3b96e-3d8b-49f1-8c69-f534b4fe59cb
Local pid:: pubs:14702
Source identifiers:: 14702
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_dba3b96e3d8b49f18c69f534b4fe59cb

Terms of use

Copyright date:: 1997

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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