Journal article
Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
- Abstract:
- Carrier localization in InGaN/GaN multiple-quantum wells (MQWs) with three different well thicknesses was investigated optically using time-integrated and time-resolved microphotoluminescence spectroscopy. An anomalous temperature dependence of the photoluminescence peak energy was observed, as a consequence of local potential fluctuations. The carrier localization was more prominent in the case of MQWs with wide well thickness. The results indicate that the degree of potential fluctuation increases with increasing well thickness. Emission from quantum-dot-like states only became apparent in MQWs with wide well thickness, which supports the assertion that carrier localization in InGaN/GaN MQWs is due to the formation of quantum dots.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
Actions
Access Document
- Files:
-
-
(Preview, Version of record, pdf, 325.7KB, Terms of use)
-
- Publisher copy:
- 10.1063/1.2423232
Authors
Contributors
+ Parbrook, P
- Institution:
- University of Sheffield
- Department:
- Department of Electronic and Electrical Engineering,EPSRC National Centre for III-V Technologies
- Publisher:
- American Institute of Physics
- Journal:
- Applied Physics Letters More from this journal
- Volume:
- 89
- Issue:
- 25
- Article number:
- 253120
- Publication date:
- 2006-12-01
- Edition:
- Publisher's version
- DOI:
- ISSN:
-
0003-6951
- Language:
-
English
- Keywords:
- Subjects:
- UUID:
-
uuid:da889742-736b-45a5-a784-ccac013e75e5
- Local pid:
-
ora:1423
- Deposit date:
-
2008-03-14
Terms of use
- Copyright holder:
- American Institute of Physics
- Copyright date:
- 2006
- Notes:
- Citation: Na, J. H. et al. (2006). 'Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness', Applied Physics Letters, 89(25), 253120. [Available at http://apl.aip.org/]. © 2006 American Institute of Physics.
If you are the owner of this record, you can report an update to it here: Report update to this record