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Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness

Abstract:

Carrier localization in InGaN/GaN multiple-quantum wells (MQWs) with three different well thicknesses was investigated optically using time-integrated and time-resolved microphotoluminescence spectroscopy. An anomalous temperature dependence of the photoluminescence peak energy was observed, as a consequence of local potential fluctuations. The carrier localization was more prominent in the case of MQWs with wide well thickness. The results indicate that the degree of potential fluctuation in...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1063/1.2423232

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Institution:
University of Oxford
Department:
Mathematical,Physical & Life Sciences Division - Physics
Role:
Author
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Institution:
University of Oxford
Department:
Mathematical,Physical & Life Sciences Division - Physics
Role:
Author
More by this author
Institution:
University of Oxford
Department:
Mathematical,Physical & Life Sciences Division - Physics
Role:
Author
More by this author
Institution:
University of Sheffield
Department:
Department of Electronic and Electrical Engineering,EPSRC National Centre for III-V Technologies
Role:
Author
More by this author
Institution:
University of Sheffield
Department:
Department of Electronic and Electrical Engineering,EPSRC National Centre for III-V Technologies
Role:
Author
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Contributors

Institution:
University of Sheffield
Department:
Department of Electronic and Electrical Engineering,EPSRC National Centre for III-V Technologies
Engineering and Physical Sciences Research Council More from this funder
Hitachi Cambridge Laboratory More from this funder
Publisher:
American Institute of Physics Publisher's website
Journal:
Applied Physics Letters Journal website
Volume:
89
Issue:
25
Pages:
Article: 253120
Publication date:
2006-12-05
DOI:
ISSN:
0003-6951
URN:
uuid:da889742-736b-45a5-a784-ccac013e75e5
Local pid:
ora:1423

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