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Study of Ho-doped Bi2Te3 topological insulator thin films

Abstract:
Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi2Te3 thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μB/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1063/1.4935235

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author


Publisher:
American Institute of Physics
Journal:
Applied Physics Letters More from this journal
Volume:
107
Issue:
18
Pages:
182406
Publication date:
2015-11-03
Acceptance date:
2015-10-25
DOI:
ISSN:
0003-6951


Language:
English
Pubs id:
pubs:571851
UUID:
uuid:da381223-e2fa-497f-8777-a4e4f839f6ff
Local pid:
pubs:571851
Source identifiers:
571851
Deposit date:
2015-11-03

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