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Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure

Abstract:

We have measured the effect of in-plane magnetic field on tunneling resonances between transverse X states in GaAs/AlAs double-barrier structures under high hydrostatic pressure. Current-voltage and conductance-voltage measurements performed at pressures just beyond the type-II transition, and at fields up to 15 T, reveal clear field dependences of resonances originating from the Xt(1)→Xt(1) and Xt(1)→Xt(2) tunneling processes. Their behavior is consistent with a Lorenz force analysis, and th...

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Journal:
Physical Review B - Condensed Matter and Materials Physics
Volume:
58
Issue:
8
Pages:
4708-4712
Publication date:
1998-08-15
ISSN:
0163-1829
URN:
uuid:d9986949-78ef-492a-9856-4a4b563a796f
Source identifiers:
133846
Local pid:
pubs:133846
Language:
English

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