Journal article
Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
- Abstract:
-
We have measured the effect of in-plane magnetic field on tunneling resonances between transverse X states in GaAs/AlAs double-barrier structures under high hydrostatic pressure. Current-voltage and conductance-voltage measurements performed at pressures just beyond the type-II transition, and at fields up to 15 T, reveal clear field dependences of resonances originating from the Xt(1)→Xt(1) and Xt(1)→Xt(2) tunneling processes. Their behavior is consistent with a Lorenz force analysis, and th...
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Bibliographic Details
- Journal:
- Physical Review B - Condensed Matter and Materials Physics
- Volume:
- 58
- Issue:
- 8
- Pages:
- 4708-4712
- Publication date:
- 1998-08-15
- ISSN:
-
0163-1829
- Source identifiers:
-
133846
Item Description
- Language:
- English
- Pubs id:
-
pubs:133846
- UUID:
-
uuid:d9986949-78ef-492a-9856-4a4b563a796f
- Local pid:
- pubs:133846
- Deposit date:
- 2012-12-19
Terms of use
- Copyright date:
- 1998
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