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Van der Waals epitaxy between the highly lattice mismatched Cu doped FeSe and Bi₂Te₃

Abstract:
We present a structural and density functional theory study of FexCu1-xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1-xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically-sharp FexCu1-xSe/Bi2Te3 interface. The FexCu1-xSe /Bi2Te3 interface is determined by Se-Te bonds and no misfit dislocations are observed, despite the different lattice symmetries and large lattice mismatch of ∼ 19%. First-principle calculations show that the large strain at the FexCu1-xSe /Bi2Te3 interface can be accommodated via van der Waals-like bonding between Se and Te atoms.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1038/am.2017.111

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Institution:
University of Oxford
Oxford college:
Christ Church
Role:
Author


Publisher:
Springer Nature
Journal:
NPG Asia Materials More from this journal
Volume:
9
Pages:
e402
Publication date:
2017-07-07
Acceptance date:
2017-05-19
DOI:
EISSN:
1884-4057


Keywords:
Pubs id:
pubs:697009
UUID:
uuid:d8c5a5ca-2d00-4052-bfbf-0582b74ecfbf
Local pid:
pubs:697009
Source identifiers:
697009
Deposit date:
2017-05-24

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