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Van der Waals epitaxy between the highly lattice mismatched Cu doped FeSe and Bi₂Te₃

Abstract:

We present a structural and density functional theory study of FexCu1-xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1-xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically-sharp FexCu1-xSe/Bi2Te3 interface. The FexCu1-xSe /Bi2Te3 interface is determined by Se-Te bonds and no misfit dislocations are obse...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1038/am.2017.111

Authors


Ghasemi, A More by this author
Kepaptsoglou, D More by this author
Galindo, PL More by this author
Ramasse, Q More by this author
More by this author
Institution:
University of Oxford
Department:
Christ Church
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Publisher:
Springer Nature Publisher's website
Journal:
NPG Asia Materials Journal website
Volume:
9
Pages:
e402
Publication date:
2017-07-07
Acceptance date:
2017-05-19
DOI:
EISSN:
1884-4057
Pubs id:
pubs:697009
URN:
uri:d8c5a5ca-2d00-4052-bfbf-0582b74ecfbf
UUID:
uuid:d8c5a5ca-2d00-4052-bfbf-0582b74ecfbf
Local pid:
pubs:697009
Keywords:

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