Journal article

Van der Waals epitaxy between the highly lattice mismatched Cu doped FeSe and Bi₂Te₃

Abstract:: We present a structural and density functional theory study of FexCu1-xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1-xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically-sharp FexCu1-xSe/Bi2Te3 interface. The FexCu1-xSe /Bi2Te3 interface is determined by Se-Te bonds and no misfit dislocations are obse...
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Publication status:: Published

Peer review status:: Peer reviewed

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APA Style

Ghasemi, A., Kepaptsoglou, D., Galindo, P., Ramasse, Q., Hesjedal, T., & Lazarov, V. (2017). Van der Waals epitaxy between the highly lattice mismatched Cu doped FeSe and Bi₂Te₃. NPG Asia Materials, 9, e402.

MLA Style

Ghasemi, A., et al. “Van Der Waals Epitaxy between the Highly Lattice Mismatched Cu Doped FeSe and Bi₂Te₃.” NPG Asia Materials, vol. 9, Springer Nature, 2017, p. e402.

Chicago Style

Ghasemi, A, D Kepaptsoglou, P Galindo, Q Ramasse, T Hesjedal, and V Lazarov. 2017. “Van Der Waals Epitaxy between the Highly Lattice Mismatched Cu Doped FeSe and Bi₂Te₃.” NPG Asia Materials 9: e402.
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Files:: am2017111a.pdf

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Publisher copy:: 10.1038/am.2017.111

Authors

+ Ghasemi, A More by this author

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+ Kepaptsoglou, D More by this author

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+ Galindo, P More by this author

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+ Ramasse, Q More by this author

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+ Hesjedal, T More by this author

Institution:

University of Oxford

Oxford college:

Christ Church

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Bibliographic Details

Publisher:: Springer Nature
Journal:: NPG Asia Materials More from this journal
Volume:: 9
Pages:: e402
Publication date:: 2017-07-07
Acceptance date:: 2017-05-19
DOI:: 10.1038/am.2017.111
EISSN:: 1884-4057

Item Description

Keywords:: Article
Pubs id:: pubs:697009
UUID:: uuid:d8c5a5ca-2d00-4052-bfbf-0582b74ecfbf
Local pid:: pubs:697009
Source identifiers:: 697009
Deposit date:: 2017-05-24

Terms of use

Copyright holder:: Ghasemi et al
Copyright date:: 2017
Notes:: © the Author(s). This work is licensed under a Creative Commons Attribution 4.0 International License.

Licence:: CC Attribution (CC BY)

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