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Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN

Abstract:

The effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n-and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contact resistivity better than 10-7 ω cm2 was obtained using a plasma treatment of 20 s at 30 W and 0.2 mbar, followed by RTA at 500°C in argon. The I-V characteristics of the Ti/Al contacts degraded wh...

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Publisher copy:
10.1002/pssb.200405056

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
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Journal:
Physica Status Solidi C: Conferences
Volume:
1
Issue:
10
Pages:
2820-2824
Publication date:
2004-01-01
DOI:
ISSN:
1610-1634
URN:
uuid:d8100016-22bf-4f4b-8fc6-a51d4c2e681a
Source identifiers:
178914
Local pid:
pubs:178914
Language:
English

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