- Abstract:
-
The effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n-and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contact resistivity better than 10-7 ω cm2 was obtained using a plasma treatment of 20 s at 30 W and 0.2 mbar, followed by RTA at 500°C in argon. The I-V characteristics of the Ti/Al contacts degraded wh...
Expand abstract - Publisher copy:
- 10.1002/pssb.200405056
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- Journal:
- Physica Status Solidi C: Conferences
- Volume:
- 1
- Issue:
- 10
- Pages:
- 2820-2824
- Publication date:
- 2004-01-01
- DOI:
- ISSN:
-
1610-1634
- URN:
-
uuid:d8100016-22bf-4f4b-8fc6-a51d4c2e681a
- Source identifiers:
-
178914
- Local pid:
- pubs:178914
- Language:
- English
- Copyright date:
- 2004
Journal article
Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN
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