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SQUEEZED-LIGHT GENERATION IN SEMICONDUCTORS

Abstract:

We have generated pulsed squeezed light using the third-order nonlinear susceptibility of the semiconductor ZnS at room temperature. The photon energy was chosen to be below midgap in order to minimize nonlinear absorption. Efficient quadrature squeezing of 2.2 dB (40%) was obtained using 125 fs pulses at a center wavelength of 780 nm. The measured noise is suppressed below the quantum limit over the entire range of our detection bandwidth (30-50 MHz). The scheme employed can generally be app...

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Publication status:
Published

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Publisher copy:
10.1103/PhysRevLett.74.1728

Authors


Journal:
PHYSICAL REVIEW LETTERS
Volume:
74
Issue:
10
Pages:
1728-1731
Publication date:
1995-03-06
DOI:
EISSN:
1079-7114
ISSN:
0031-9007
URN:
uuid:d77bdb44-a919-454a-a229-757e3f6fcd05
Source identifiers:
3593
Local pid:
pubs:3593
Language:
English

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