Journal article

SQUEEZED-LIGHT GENERATION IN SEMICONDUCTORS

Abstract:: We have generated pulsed squeezed light using the third-order nonlinear susceptibility of the semiconductor ZnS at room temperature. The photon energy was chosen to be below midgap in order to minimize nonlinear absorption. Efficient quadrature squeezing of 2.2 dB (40%) was obtained using 125 fs pulses at a center wavelength of 780 nm. The measured noise is suppressed below the quantum limit over the entire range of our detection bandwidth (30-50 MHz). The scheme employed can generally be applied to semiconductors, and opens the way for squeezed light generation over a wide range of wavelengths.

Publication status:: Published

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APA Style

Fox, A., Baumberg, J., Dabbicco, M., Huttner, B., & Ryan, J. (1995). SQUEEZED-LIGHT GENERATION IN SEMICONDUCTORS. Physical Review Letters, 74(10), 1728–1731.

MLA Style

Fox, A., et al. “SQUEEZED-LIGHT GENERATION IN SEMICONDUCTORS.” Physical Review Letters, vol. 74, no. 10, 1995, pp. 1728–31.

Chicago Style

Fox, A, J Baumberg, M Dabbicco, B Huttner, and J Ryan. 1995. “SQUEEZED-LIGHT GENERATION IN SEMICONDUCTORS.” Physical Review Letters 74 (10): 1728–31.
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Publisher copy:: 10.1103/PhysRevLett.74.1728

Authors

+ Fox, A More by this author

Role:: Author

+ Baumberg, J More by this author

Role:: Author

+ Dabbicco, M More by this author

Role:: Author

+ Huttner, B More by this author

Role:: Author

+ Ryan, J More by this author

Role:: Author

Journal:: Physical Review Letters More from this journal
Volume:: 74
Issue:: 10
Pages:: 1728-1731
Publication date:: 1995-03-06
DOI:: 10.1103/PhysRevLett.74.1728
EISSN:: 1079-7114
ISSN:: 0031-9007

Language:: English
Pubs id:: pubs:3593
UUID:: uuid:d77bdb44-a919-454a-a229-757e3f6fcd05
Local pid:: pubs:3593
Source identifiers:: 3593
Deposit date:: 2012-12-19

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Copyright date:: 1995

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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