A method is presented for the determination of elastic strains from electron back scatter diffraction patterns, which are obtained at high spatial resolution, from bulk specimens in a scanning electron microscope. It is estimated that the method is sensitive to strains of the order of 0.02%. Strains in Si(1-x)Ge(x) epitaxial layers grown on planar Si substrates were measured for x from 0.2 to 0.015, there being excellent agreement with X-ray diffraction results. Small lattice rotations can al...Expand abstract
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Measurement of elastic strains and small lattice rotations using electron back scatter diffraction.
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