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Measurement of elastic strains and small lattice rotations using electron back scatter diffraction.

Abstract:

A method is presented for the determination of elastic strains from electron back scatter diffraction patterns, which are obtained at high spatial resolution, from bulk specimens in a scanning electron microscope. It is estimated that the method is sensitive to strains of the order of 0.02%. Strains in Si(1-x)Ge(x) epitaxial layers grown on planar Si substrates were measured for x from 0.2 to 0.015, there being excellent agreement with X-ray diffraction results. Small lattice rotations can al...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Journal:
Ultramicroscopy
Volume:
62
Issue:
4
Pages:
237-247
Publication date:
1996-03-05
DOI:
EISSN:
1879-2723
ISSN:
0304-3991
URN:
uuid:d556deb0-c8f8-40d2-bca5-d27d80fec695
Source identifiers:
1451
Local pid:
pubs:1451
Language:
English

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