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Superconducting NbN Resonator Parametric Amplifiers for Millimetre Wavelengths

Abstract:
We report the development of a reactive sputtering process for high Tc NbN films with high normal-state resistivity, tailored for kinetic inductance parametric amplifiers. The process includes precise control to ensure full nitridation of the target prior to deposition. Under optimised conditions, the resulting NbN thin films exhibit a critical temperature of 10.5K and a resistivity of ∼1000μΩcm. The high Tc of the NbN thin films suggests strong potential for application over the entire millimetre-wave frequency range from 24 to 300GHz, whereas the high resistivity suggests a reduced power requirement for the pump tone to achieve high gain. Resonator parametric amplifiers have been fabricated from these films using coplanar waveguide geometry. The devices were able to produce high gain exceeding 20dB at 25GHz, with artefact-free, reproducible amplification profiles in good agreement with theoretical models.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1007/s10909-026-03432-5

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Institution:
University of Oxford
Role:
Author
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Institution:
University of Oxford
Role:
Author


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Funder identifier:
https://ror.org/001aqnf71
Grant:
ST/T006307/2


Publisher:
Springer
Journal:
Journal of Low Temperature Physics More from this journal
Volume:
222
Issue:
4
Article number:
100
Publication date:
2026-06-29
Acceptance date:
2026-06-02
DOI:
EISSN:
1573-7357
ISSN:
0022-2291


Language:
English
Keywords:
Source identifiers:
4282171
Deposit date:
2026-06-30
ARK identifier:
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