The effect of high voltage on the bend transition in Pi-cells

Journal article

In Pi-cells, applying a high voltage to the initial splay state is known as the simplest method to generate the bend state quickly. It is generally assumed that the higher the applied voltage, the faster the bend transition. However, in some cases, the bend transition speed can be reduced and the transition process can even stop completely as the applied voltage increases. Therefore, in this paper, we consider situations where a higher voltage does not enhance the speed of the bend transition, and why this issue is important for commercial liquid crystal displays. © 2010 American Institute of Physics.

Authors: Lee, C; Raynes, E; Elston, S

• Publication status: Published
• Journal: APPLIED PHYSICS LETTERS
• Volume: 97
• Issue: 15
• Pages: 153501-153501
• Publication date: 2010-10-11
• DOI: 10.1063/1.3502472
• ISSN: 0003-6951
• Language: English