- Abstract:
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In this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) measurements allow a comprehensive characterization of Al1-xInxN thin films grown on GaN. Within the limits of experimental accuracy, and in the compositional range 0.08 < x < 0.28, the lattice parameters of the alloys generally obey Vegard's rule, varying linearly with the InN fraction. Results are also consistent with the small deviation from linear behaviour suggested by Darakchieva et ...
Expand abstract - Publication status:
- Published
- Peer review status:
- Peer reviewed
- Version:
- Publisher's version
- Files:
-
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(pdf, 3.0mb)
-
- Publisher copy:
- 10.1088/1361-6463/aa69dc
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- Publisher:
- Institute of Physics Publisher's website
- Journal:
- Journal of Physics D: Applied Physics Journal website
- Volume:
- 50
- Issue:
- 20
- Pages:
- 205107
- Publication date:
- 2017-04-05
- Acceptance date:
- 2017-03-29
- DOI:
- EISSN:
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1361-6463
- ISSN:
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0022-3727
- Pubs id:
-
pubs:697226
- URN:
-
uri:d274df2a-431f-4bcd-83e6-bd5354954b01
- UUID:
-
uuid:d274df2a-431f-4bcd-83e6-bd5354954b01
- Local pid:
- pubs:697226
- Keywords:
- Copyright holder:
- IOP Publishing Ltd
- Copyright date:
- 2017
- Notes:
- © 2017 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Journal article
Validity of Vegard’s rule for Al₁₋ₓ Inₓ N (0.08
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