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High-performance field effect transistors from solution processed carbon nanotubes.

Abstract:

Nanoelectronic field effect transistors (FETs) are produced using solution processed individual carbon nanotubes (CNTs), synthesized by both arc discharge and laser ablation methods. We show that the performance of solution processed FETs approaches that of CVD-grown FETs if the nanotubes have minimal lattice defects and are free from surface contamination. This is achieved by treating the nanotubes to a high-temperature vacuum annealing process and using 1,2-dichloroethane for dispersion. We...

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Publication status:
Published

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Publisher copy:
10.1021/nn1020743

Authors


Robertson, A More by this author
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Journal:
ACS nano
Volume:
4
Issue:
11
Pages:
6659-6664
Publication date:
2010-11-05
DOI:
EISSN:
1936-086X
ISSN:
1936-0851
URN:
uuid:ce1fe4a1-4246-4f68-8b01-9dbe7e60d556
Source identifiers:
90792
Local pid:
pubs:90792

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