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Compositional nonuniformities in pulsed laser atom probe tomography analysis of compound semiconductors

Abstract:: The unidirectional laser illumination of atom probe tomography specimens can result in changes of the apex morphology from nearly hemispherical to asymmetrical with different local radii of curvature, implying an anisotropic field distribution across the sample surface. In the analysis of III-V semiconductors, this affects the process of field dissociation of group-V cluster ions and introduces variations in the apparent composition across the field of view. We have studied this phenomenon in...
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Publication status:: Published

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APA Style

Mueller, M., Smith, G., Gault, B., & Grovenor, C. (2012). Compositional nonuniformities in pulsed laser atom probe tomography analysis of compound semiconductors. JOURNAL OF APPLIED PHYSICS, 111(6), 064908–064908.

MLA Style

Mueller, M., et al. “Compositional Nonuniformities in Pulsed Laser Atom Probe Tomography Analysis of Compound Semiconductors.” JOURNAL OF APPLIED PHYSICS, vol. 111, no. 6, 2012, pp. 064908–08.

Chicago Style

Mueller, M, G Smith, B Gault, and C Grovenor. 2012. “Compositional Nonuniformities in Pulsed Laser Atom Probe Tomography Analysis of Compound Semiconductors.” JOURNAL OF APPLIED PHYSICS 111 (6): 064908–.
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Publisher copy:: 10.1063/1.3695461

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+ Mueller, M More by this author

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+ Smith, G More by this author

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+ Gault, B More by this author

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+ Grovenor, C More by this author

Institution:

University of Oxford

Division:

MPLS

Department:

Materials

Role:

Author

Bibliographic Details

Journal:: JOURNAL OF APPLIED PHYSICS
Volume:: 111
Issue:: 6
Pages:: 064908-064908
Publication date:: 2012-03-15
DOI:: 10.1063/1.3695461
ISSN:: 0021-8979

Item Description

Language:: English
Pubs id:: pubs:331016
UUID:: uuid:cc76c920-f993-4a11-b213-0e836f138cc7
Local pid:: pubs:331016
Source identifiers:: 331016
Deposit date:: 2012-12-19

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Copyright date:: 2012

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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