Journal article

Interface composition dependence of the band offset in InAs/GaSb

Publication status:: Published

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APA Style

Daly, M. S., Symons, D., Lakrimi, M., Nicholas, R., Mason, N., & Walker, P. (1996). Interface composition dependence of the band offset in InAs/GaSb. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 11(5), 823–826.

MLA Style

Daly, M. S., et al. “Interface Composition Dependence of the Band Offset in InAs/GaSb.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 11, no. 5, 1996, pp. 823–26.

Chicago Style

Daly, MS, D Symons, M Lakrimi, R Nicholas, N Mason, and P Walker. 1996. “Interface Composition Dependence of the Band Offset in InAs/GaSb.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 11 (5): 823–26.
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Authors

+ Daly, MS More by this author

Role:: Author

+ Symons, D More by this author

Role:: Author

+ Lakrimi, M More by this author

Role:: Author

+ Nicholas, R More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

+ Mason, N More by this author

Role:: Author

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Journal:: SEMICONDUCTOR SCIENCE AND TECHNOLOGY More from this journal
Volume:: 11
Issue:: 5
Pages:: 823-826
Publication date:: 1996-05-01
ISSN:: 0268-1242

Pubs id:: pubs:28842
UUID:: uuid:cb62206c-292a-4b7b-b810-5287829daea7
Local pid:: pubs:28842
Source identifiers:: 28842
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1996

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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