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Mathematical modeling of contact resistance in silicon photovoltaic cells

Abstract:

In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a m...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1137/130911974

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Institution:
University of Oxford
Division:
MPLS
Department:
Mathematical Institute
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Mathematical Institute
Role:
Author
Publisher:
Society for Industrial and Applied Mathematics
Journal:
SIAM Journal on Applied Mathematics More from this journal
Volume:
73
Issue:
5
Pages:
1906-1925
Publication date:
2013-10-22
DOI:
EISSN:
1095-712X
ISSN:
0036-1399
Keywords:
Pubs id:
pubs:441095
UUID:
uuid:ca94ddfa-51e7-4d1c-9dda-c099292ea44a
Local pid:
pubs:441095
Source identifiers:
441095
Deposit date:
2014-05-14

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