Investigation of C60F36 as low-volatility p-dopant in organic optoelectronic devices

Journal article

We demonstrate highly efficient small molecule organic light emitting diodes and organic solar cells based on the p-i-n-type structure using the fluorinated fullerene molecule C₆₀F₃₆ as p-dopant in the hole transport layer. We present synthesis, chemical analysis, and energy level investigation of the dopant as well as the conductivity of organic layers consisting of a matrix of N,N,N′,N′-tetrakis 4-methoxyphenyl-benzidine(MeO-TPD) or N,N′-[(Diphenyl-N,N′-bis)9,9,-dimethyl-fluoren-2-yl]-benzidine(BF-DPB) doped by the fullerene compound. State of the art organic p-i-n devices containing C₆₀F₃₆ show efficiencies comparable to devices with the commonly used p-dopant2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄-TCNQ). The advantages of the fullerene based dopant are the low volatility and high thermal stability, which is beneficial for device operation under elevated temperature. These properties make C₆₀F₃₆ highly attractive for the usage as p-dopant in a broad spectrum of organic p-i-n devices like organic light emitting diodes, solar cells, memories, or transistors. © 2011 American Institute of Physics.

Authors: Meerheim, R; Olthof, S; Hermenau, M; Scholz, S; Petrich, A

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: American Institute of Physics
• Journal: Journal of Applied Physics
• Volume: 109
• Issue: 10
• Article number: 103102
• Publication date: 2011-05-15
• DOI: 10.1063/1.3590142
• ISSN: 0021-8979
• Language: English