Journal article
Dimensional crossover in the carrier mobility of two-dimensional semiconductors: the case of InSe
- Abstract:
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Two-dimensional (2D) semiconductors are at the center of an intense research effort aimed at developing the next generation of flexible, transparent, and energy-efficient electronics. In these applications, the carrier mobility, that is the ability of electrons and holes to move rapidly in response to an external voltage, is a critical design parameter. Here, we show that the interlayer coupling between electronic wave functions in 2D semiconductors can be used to drastically alter carrier mo...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
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Access Document
- Files:
-
-
(Accepted manuscript, pdf, 6.4MB)
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- Publisher copy:
- 10.1021/acs.nanolett.8b04799
Authors
Funding
Bibliographic Details
- Publisher:
- American Chemical Society Publisher's website
- Journal:
- Nano Letters Journal website
- Volume:
- 19
- Issue:
- 3
- Pages:
- 1774-1781
- Publication date:
- 2019-02-08
- Acceptance date:
- 2018-12-01
- DOI:
- EISSN:
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1530-6992
- ISSN:
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1530-6984
- Pmid:
-
30734566
Item Description
- Language:
- English
- Keywords:
- Pubs id:
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pubs:973852
- UUID:
-
uuid:c9d869e1-f0d0-4dcd-ba2f-517c732074bd
- Local pid:
- pubs:973852
- Source identifiers:
-
973852
- Deposit date:
- 2019-03-25
Terms of use
- Copyright holder:
- American Chemical Society
- Copyright date:
- 2019
- Rights statement:
- © 2019 American Chemical Society
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