Journal article
Atomistic model of the 4H(0001)SiC-SiO2 interface: Structural and electronic properties
- Abstract:
- Through the sequential use of classical molecular dynamics and first-principles relaxation methods, we generate an abrupt model interface for the 4H(0001)SiC-SiO2 interface showing regular structural parameters without any coordination defect. The valence and conduction band offsets are calculated and found to be in fair agreement with the experimental values. Si-2p core-level shifts are calculated for this model interface and compared with available experimental data. © 2007 American Institute of Physics.
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- Publisher copy:
- 10.1063/1.2729890
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Authors
Bibliographic Details
- Journal:
- AIP Conference Proceedings
- Volume:
- 893
- Pages:
- 307-308
- Publication date:
- 2007-01-01
- DOI:
- EISSN:
-
1551-7616
- ISSN:
-
0094-243X
- URN:
-
uuid:c7f97063-35e6-44ae-a0ac-dec10cd7d142
- Source identifiers:
-
179102
- Local pid:
- pubs:179102
Item Description
- Language:
- English
- Keywords:
Terms of use
- Copyright date:
- 2007
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