EFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS.

Journal article

Dislocation velocities in semiconductors depend strongly on the concentration of electrically active impurities, at temperatures in which the intrinsic lattice resistance is rate controlling. The effect is explained in terms of deep acceptor and donor levels in the band gap associated with kinks. Doping affects yield stress, indentation hardness and the pattern of plastic flow and cracking around indentations. New insight has been gained about the nature of the plastic zone under an indenter, and the difference in hardness of (111) and (III) faces of GaAs has been explained.

Authors: Hirsch, P; Pirouz, P; Roberts, S; Warren, P

• Journal: Institute of Physics Conference Series
• Issue: 75
• Pages: 83-105
• Publication date: 1986-01-01
• ISSN: 0373-0751
• Language: English