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Silicon spin diffusion transistor: materials, physics and device characteristics

Publication status:: Published

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APA Style

Dennis, C., Tiusan, C., Gregg, J., Ensell, G., & Thompson, S. (2005). Silicon spin diffusion transistor: materials, physics and device characteristics. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 152(4), 340–354.

MLA Style

Dennis, C., et al. “Silicon Spin Diffusion Transistor: Materials, Physics and Device Characteristics.” IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, vol. 152, no. 4, 2005, pp. 340–54.

Chicago Style

Dennis, C, C Tiusan, J Gregg, G Ensell, and S Thompson. 2005. “Silicon Spin Diffusion Transistor: Materials, Physics and Device Characteristics.” IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS 152 (4): 340–54.
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Publisher copy:: 10.1049/ip-cds:20050008

Authors

+ Dennis, C More by this author

Role:: Author

+ Tiusan, C More by this author

Role:: Author

+ Gregg, J More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

+ Ensell, G More by this author

Role:: Author

+ Thompson, S More by this author

Role:: Author

Journal:: IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS More from this journal
Volume:: 152
Issue:: 4
Pages:: 340-354
Publication date:: 2005-08-01
DOI:: 10.1049/ip-cds:20050008
ISSN:: 1350-2409

Pubs id:: pubs:1401
UUID:: uuid:c546b482-3ca4-4fe6-873b-7a63c9f4add6
Local pid:: pubs:1401
Source identifiers:: 1401
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 2005

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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