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Charge collection studies in irradiated HV-CMOS particle detectors

Abstract:

Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons from 90Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift con...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher:
IOP Publishing Publisher's website
Journal:
Journal of Instrumentation Journal website
Volume:
11
Issue:
4
Pages:
P04007-P04007
Publication date:
2016-04-04
Acceptance date:
2016-03-14
DOI:
EISSN:
1748-0221
URN:
uuid:c49109db-1762-4bfb-8c8a-38637469989c
Source identifiers:
617579
Local pid:
pubs:617579
Paper number:
4
Keywords:

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