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Data for "Lowest surface recombination in n-type oxidised crystalline silicon by means of extrinsic field effect passivation"

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Department:
Oxford Materials Department
Role:
Depositor, Researcher, Creator
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Department:
Oxford Materials Department
Role:
Creator
More by this author
Department:
Oxford Materials Department
Role:
Creator
Publisher:
University of Oxford
Publication date:
2016
DOI:
Format:
Digital
Documentation:
Surface recombination remains a major factor limiting the efficiency of silicon solar cells. The post-processing of dielectric films used as surface coatings has been previously demonstrated an effective technique to improve their passivation quality. In this paper extrinsic methods are demonstrated to produce the lowest reported surface recombination velocity in solar relevant n-type silicon. Recombination velocities below 2.8 cm/s at an injection of 1015 cm-3, are achieved using extrinsic f... Expand documentation

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