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Low-loss EELS of 2D boron nitride

Abstract:
Electron energy loss spectroscopy provides a probe of the dielectric function of a material which can be affected by the size and morphology of a sample. In this paper, the effect on the loss function when hexagonal boron nitride is reduced to a single layer is investigated. The previously predicted red-shift of the spectrum is seen in experiment and reproduced by modelling using density functional theory. The dielectric function shows that, for a single layer, the lack of screening causes the real part of the dielectric function to tend to 1 so that the loss function resembles the imaginary part of the dielectric function.
Publication status:
Published

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Publisher copy:
10.1088/1742-6596/371/1/012060

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author


Journal:
ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2011 (EMAG 2011) More from this journal
Volume:
371
Pages:
012060-012060
Publication date:
2012-01-01
DOI:
EISSN:
1742-6596
ISSN:
1742-6588


Language:
English
Pubs id:
pubs:351028
UUID:
uuid:c26021ea-cc42-4046-8a29-d4b55e1c287b
Local pid:
pubs:351028
Source identifiers:
351028
Deposit date:
2013-11-17

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