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Long term stability of c-Si surface passivation using corona charged SiO2

Abstract:

Recombination at the semiconductor surface continues to be a major limit to optoelectronic device performance, in particular for solar cells. Passivation films reduce surface recombination by a combination of chemical and electric field effect components. Dielectric films used for this purpose, however, must also accomplish optical functions at the cell surface. In this paper, corona charge is seen as a potential method to enhance the passivation properties of a dielectric film while maint...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1016/j.apsusc.2017.03.204

Authors


Reichel, C More by this author
More by this author
Department:
Oxford, MPLS, Materials
More by this author
Department:
Oxford, MPLS, Materials
Publisher:
Elsevier Publisher's website
Journal:
Applied Surface Science Journal website
Volume:
412
Pages:
657–667
Publication date:
2017-03-27
Acceptance date:
2017-03-23
DOI:
ISSN:
0169-4332
Pubs id:
pubs:687257
URN:
uri:c158edd3-a4d4-4514-aba4-135337ca205c
UUID:
uuid:c158edd3-a4d4-4514-aba4-135337ca205c
Local pid:
pubs:687257

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