Journal article
Long term stability of c-Si surface passivation using corona charged SiO2
- Abstract:
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Recombination at the semiconductor surface continues to be a major limit to optoelectronic device performance, in particular for solar cells. Passivation films reduce surface recombination by a combination of chemical and electric field effect components. Dielectric films used for this purpose, however, must also accomplish optical functions at the cell surface. In this paper, corona charge is seen as a potential method to enhance the passivation properties of a dielectric film while maint...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
- Version:
- Publisher's version
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- Files:
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(pdf, 2.8MB)
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- Publisher copy:
- 10.1016/j.apsusc.2017.03.204
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Authors
Funding
+ Engineering and Physical Sciences Research Council
More from this funder
Funding agency for:
Bonilla Osorio, Ruy S.
+ Engineering and Physical Sciences Research Council
More from this funder
Funding agency for:
Hamer, P
+ Engineering and Physical Sciences Research Council
More from this funder
Funding agency for:
Wilshaw, PR
Bibliographic Details
- Publisher:
- Elsevier Publisher's website
- Journal:
- Applied Surface Science Journal website
- Volume:
- 412
- Pages:
- 657–667
- Publication date:
- 2017-03-27
- Acceptance date:
- 2017-03-23
- DOI:
- ISSN:
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0169-4332
- Pubs id:
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pubs:687257
- URN:
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uri:c158edd3-a4d4-4514-aba4-135337ca205c
- UUID:
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uuid:c158edd3-a4d4-4514-aba4-135337ca205c
- Local pid:
- pubs:687257
Item Description
Terms of use
- Copyright holder:
- Bonilla et al.
- Copyright date:
- 2017
- Notes:
-
© 2017 The Authors. Published by Elsevier B.V.This is an open access article under the CC BY license
(http://creativecommons.org/licenses/by/4.0/).
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