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Methods for determining elastic strains from electron backscatter diffraction and electron channelling patterns

Abstract:
Two approaches to the measurement of elastic strains from electron channelling patterns (ECPs) and electron backscatter diffraction (EBSD) patterns are assessed. Analysis of the shift in channelling (or Kikuchi) line positions has been shown to yield strain sensitivities of up to 3 parts in 10(4) when {10 10 0} lines in ECPs are used. The lack of such fine detail in EBSD patterns restricts such methods to strains at least one order of magnitude greater. For EBSD an alternative method is presented in which elastic strains are determined from measurements of small shifts in zone axis positions. The strain sensitivity of the method was found to be 2 parts in 10(4). Measurements, using this method, of elastic strains in Si1-xGex epitaxial layers grown on Si substrates gave excellent agreements with X-Ray diffraction data. The EBSD technique is capable of determining elastic strain variations at submicrometre resolution.
Publication status:
Published

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Publisher copy:
10.1179/026708397790242879

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author


Journal:
MATERIALS SCIENCE AND TECHNOLOGY More from this journal
Volume:
13
Issue:
1
Pages:
79-84
Publication date:
1997-01-01
Event title:
Conference on Textures on a Microscale
DOI:
EISSN:
1743-2847
ISSN:
0267-0836


Keywords:
Pubs id:
pubs:26817
UUID:
uuid:c0abed22-eaac-40e8-b250-6fcef1cc4ee8
Local pid:
pubs:26817
Source identifiers:
26817
Deposit date:
2012-12-19

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