Conference item

Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

Abstract:: The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min. © 2010 IEEE.

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APA Style

Guo, Y., Zou, J., Joyce, H., Gao, Q., Tan, H., & Jagadish, C. (2010). Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 51–52.

MLA Style

Guo, Y., et al. “Effect of High Temperature Post-Annealing on Sidewalls of GaAs NWs Grown by MOCVD.” Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 2010, pp. 51–52.

Chicago Style

Guo, Y, J Zou, H Joyce, Q Gao, H Tan, and C Jagadish. 2010. “Effect of High Temperature Post-Annealing on Sidewalls of GaAs NWs Grown by MOCVD.” In Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 51–52.
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Publisher copy:: 10.1109/COMMAD.2010.5699774

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+ Guo, Y More by this author

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+ Zou, J More by this author

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+ Joyce, H More by this author

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+ Gao, Q More by this author

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+ Tan, H More by this author

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Host title:: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Pages:: 51-52
Publication date:: 2010-01-01
DOI:: 10.1109/COMMAD.2010.5699774
ISBN:: 9781424473328

Pubs id:: pubs:172764
UUID:: uuid:bfa0d42a-684a-427f-95b0-68efc10fa7fc
Local pid:: pubs:172764
Source identifiers:: 172764
Deposit date:: 2012-12-19

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Copyright date:: 2010

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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