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Atomic-scale investigation of the dielectric screening at the interface between silicon and its oxide

Publication status:: Published

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APA Style

Giustino, F., & Pasquarello, A. (2004). Atomic-scale investigation of the dielectric screening at the interface between silicon and its oxide. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, 786, 3–7.

MLA Style

Giustino, F., and A. Pasquarello. “Atomic-Scale Investigation of the Dielectric Screening at the Interface between Silicon and Its Oxide.” FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, vol. 786, 2004, pp. 3–7.

Chicago Style

Giustino, F, and A Pasquarello. 2004. “Atomic-Scale Investigation of the Dielectric Screening at the Interface between Silicon and Its Oxide.” In FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, 786:3–7.
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Authors

+ Giustino, F More by this author

Role:: Author

+ Pasquarello, A More by this author

Role:: Author

Host title:: FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES
Volume:: 786
Pages:: 3-7
Publication date:: 2004-01-01
ISSN:: 0272-9172
ISBN:: 1558997245

Pubs id:: pubs:173001
UUID:: uuid:bf581633-08c5-490a-ad39-414258831d25
Local pid:: pubs:173001
Source identifiers:: 173001
Deposit date:: 2012-12-19

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Copyright date:: 2004

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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